linear integrated systems ? 4042 clipper court ? fremont, ca 94538 ? tel: 510 490 - 9160 ? fax: 510 353 - 0261 doc 201131 05/15 / 2014 rev#a9 ecn# ls5905 ls5906 ls5907 ls5908 ls5909 features low drift i v g s1 - 2 /t = 5 v/ c max. ultra low leakage i g = 150f a typ. low pinchoff v p =2v typ. absolute maximum ratings 1 @ 25 c (unless otherwise noted ) maximum temperatures storage temperature - 55 to +150c operating junction temperature - 55 to +150 c maximum voltage and current for each transistor 1 - v gss gate voltage to drain or source 4 0v - i g(f) gate forward current 10m a - i g gate reverse current 10 a maximum power dissipation device dissipation @ ta=25oc - total 500mw 2 electrical characteristics @ 25oc (unless otherwise noted) symbol characteristic ls 5906 ls 5907 ls 5908 ls 5909 ls 5905 units conditions ? v gs1 - 2 / ? t max. drift vs. temperature 5 10 20 4 0 4 0 v/oc v dg = 1 0v, i d =3 0a t a = - 55oc to +125oc v gs1 - 2 max. offset voltage 5 5 10 15 1 5 mv v dg =10v i d =3 0a - i g max operating 1 1 1 1 3 pa - i g max high temperature 1 1 1 1 3 na t a =+125 oc - i g ss max gate reverse current 2 2 2 2 5 pa v ds =0v v gs = - 20 v - i g ss max gate reverse current 5 5 5 5 10 na t a =+125 oc symbol characteristic min. typ. max. units conditions bv gss breakdown voltage - 40 - 60 -- v v ds = 0 i d = - 1 a bv ggo gate - to - gate breakdown 40 -- -- v i gg = 1a i d = 0 i s = 0 transconductance g fss full conduction 7 0 30 0 5 00 s v dg = 1 0v v gs = 0 f = 1khz g fs typical operation 5 0 1 00 2 00 s v dg = 1 0v i d = 3 0a f = 1khz g fs1 / g fs 2 3 transconductance ratio -- 1 5 % drain current i dss full conduction 60 400 1000 a v d g = 1 0v v gs = 0 i dss1 /i dss 2 3 drain current ratio -- 2 5 % gate voltage v gs (off) gate - source cutoff voltage - 0.6 - 2 - 4.5 v v ds = 1 0v i d = 1na v gs operating range -- -- - 4 v v ds = 1 0v i d = 3 0a gate current i g go gate - to - gate leakage -- 1 -- pa v g g = 20v top view soic top view to - 78 case & body ls5905 ls5906 ls5907 ls5908 ls5909 low leakage low drift monolithic dual n - channel jfet amplifier
linear integrated systems ? 4042 clipper court ? fremont, ca 94538 ? tel: 510 490 - 9160 ? fax: 510 353 - 0261 doc 201131 05/15 / 2014 rev#a9 ecn# ls5905 ls5906 ls5907 ls5908 ls5909 symbol characteristic min. typ. max. units conditions output conductance g oss full conduction -- -- 5 s v dg = 10v v gs = 0 g os operating -- 0.1 -- s v dg = 10v i d = 30a g os1 - 2 differential -- 0.01 0.2 s common mode rejection cmrr - 20 log v gs1 - 2 /v ds -- 90 -- db v ds = 10 to 20v i d =30a cmrr - 20 log v gs1 - 2 /v ds -- 90 -- db v ds = 5 to 10v i d =30a noise nf figure -- -- 1 db v ds = 10v v gs = 0 r g =10m? f= 100hz nbw=6hz e n voltage -- 20 70 nv/hz v ds = 10v i d = 30a f= 10hz nbw=1hz capacitance c iss input -- -- 3 pf v ds = 10v v gs = 0 f= 1m hz c rss reverse transfer -- -- 1.5 pf v ds = 10v v gs = 0 f= 1m hz c dd drain - to - drain -- -- 0.1 pf v dg = 20v i d = 30a f= 1mhz to - 71 to - 78 p - dip soic note: all dimensions in inches g2 ss d2 s2 s1 d1 ss g1 s1 d1 ss g1 g2 ss d2 s2 1. these ratings are limiting values above which the serviceability of any semiconductor may be impaired . 2. derate 4mwoc above 25o c 3. assume smaller value in the numerator. information furnished by linear integrated systems is believed to be accurate and reliable. however, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. no license is grante d by implication or othe rwise under any patent or patent rights of linear integrated systems. notes: linear integrated systems (lis) is a 25 - year - old, third - generation precision semiconductor company providing hig h - quality discrete components. expertise brought to lis is based on processes and products developed at amelco, union carbide, intersil and micro power systems by c ompany president john h. hall. hall, a protg of silicon valley legend dr. jean hoerni, was the director of ic development at union carbide, co - founder and vice p re sident of r&d at intersil, and founder/p resident of micro power systems.
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